Patent · US Active

Integrated epitaxy and preclean system

US12125698B2 · kind B2 · utility

0Cited by
0References
9Claims
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Assignee

Inventors

Key dates

Filing dateNov 1, 2021
Grant dateOct 22, 2024
Priority date
Expiry dateNov 1, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/335
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.