Method of forming high aspect ratio features
US12125700B2 · kind B2 · utility
1Cited by
2,213References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2021 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jan 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.