Mitsuya Utsuno
7Patents
1h-index
11Co-inventors
40Inventor score
Filing activity: Oct 16, 2018 → Apr 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10755922B2 | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition | Electricity | 3 | Active |
| US11643724B2 | Method of forming structures using a neutral beam | Electricity | 1 | Active |
| US12125700B2 | Method of forming high aspect ratio features | Electricity | 1 | Active |
| US11646197B2 | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition | Electricity | 0 | Active |
| US11626316B2 | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure | Electricity | 0 | Active |
| US12129548B2 | Method of forming structures using a neutral beam | Electricity | 0 | Active |
| US10811256B2 | Method for etching a carbon-containing feature | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.