Method for providing doped silicon using a diffusion barrier layer
US12125705B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Jun 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.