Gengwei Jiang
6Patents
3h-index
19Co-inventors
50Inventor score
Filing activity: Aug 31, 2007 → Aug 11, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8211510B1 | Cascaded cure approach to fabricate highly tensile silicon nitride films | Electricity | 28 | Active |
| US8512818B1 | Cascaded cure approach to fabricate highly tensile silicon nitride films | Electricity | 20 | Active |
| US8268722B2 | Interfacial capping layers for interconnects | Electricity | 10 | Active |
| US8753978B2 | Metal and silicon containing capping layers for interconnects | Electricity | 2 | Active |
| US12322619B2 | Dynamic process control in semiconductor manufacturing | Physics | 0 | Active |
| US12125705B2 | Method for providing doped silicon using a diffusion barrier layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.