MOSFET device with undulating channel
US12125884B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 14, 2023 |
| Grant date | Oct 22, 2024 |
| Priority date | — |
| Expiry date | Apr 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
A SiC MOSFET device with alternating p-well widths, including an undulating channel, is described. The undulating channel provides current paths of multiple widths, which enables optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). The multi-width JFETs enable improved response to a short-circuit event. A high breakdown voltage is obtained by distributing a high electric field in a JFET of a first width into a JFET of a second width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.