Selective etchant compositions and methods
US12129418B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2022 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | May 12, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/00844
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.