Plasma processing system and method using radio frequency and microwave power
US12131887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.