Slurry composition, semiconductor structure and method for forming the same
US12131944B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Oct 29, 2024 |
| Priority date | — |
| Expiry date | Mar 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.