FinFET with shorter fin height in drain region than source region and related method

US12132080B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Man Gu · Malta, US
• Wenjun Li · Beijing, CN

Key dates

• Filing date: Oct 28, 2021
• Grant date: Oct 29, 2024
• Expiry date: Feb 9, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A FinFET includes a semiconductor fin, and a source region and a drain region in the same semiconductor fin. The drain region has a first fin height above a trench isolation; and the source region has a second fin height above the trench isolation. The first fin height is less than the second fin height. The FinFET may be used, for example, in a scaled laterally diffused metal-oxide semiconductor (LDMOS) application, and exhibits reduced parasitic capacitance for improved radio frequency (RF) performance. A drain extension region may have the first fin height, and a channel region may have the second fin height. A method of making the FinFET is also disclosed.