Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
US12143093B2 · kind B2 · utility
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5References
14Claims
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Key dates
| Filing date | Jul 14, 2023 |
| Grant date | Nov 12, 2024 |
| Priority date | — |
| Expiry date | Jul 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.