Front-side-type image sensor

US12148755B2 · kind B2 · utility

Assignee

• SOITEC · FR

Inventors

• Walter Schwarzenbach · Saint-Nazaire-les-Eymes, FR
• Manuel Sellier · Grenoble, FR
• Ludovic Ecarnot · Échirolles, FR

Key dates

• Filing date: Jun 21, 2019
• Grant date: Nov 19, 2024
• Expiry date: Dec 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

The invention relates to a front-side imager comprising in succession: —a semiconductor carrier substrate, a first electrically insulating separating layer, and a single-crystal semiconductor layer, called the active layer, comprising a matrix array of photodiodes, wherein the imager further comprises between the carrier substrate and the first electrically insulating layer: —a second electrically insulating separating layer, and —a second semiconductor or electrically conductive layer, called the intermediate layer, arranged between the second separating layer and the first separating layer, the second separating layer being thicker than the first separating layer.