Composition and method for polysilicon CMP
US12157834B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 2, 2020 |
| Grant date | Dec 3, 2024 |
| Priority date | — |
| Expiry date | Sep 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.