Methods of selective deposition

US12157943B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wenjing Xu · San Jose, US
• Gang Shen · Shanghai, CN
• Yufei Hu · Fremont, US
• Feng Chen · San Jose, US
• Tae Hong Ha · Seodaemun-gu, KR

Key dates

• Filing date: Sep 3, 2020
• Grant date: Dec 3, 2024
• Expiry date: Feb 15, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.