Patent · US Active

Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport

US12157955B2 · kind B2 · utility

0Cited by

5References

15Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Erwin Schmitt · Großenseebach, DE
Michael Vogel · Nuremberg, DE

Key dates

Filing date	Dec 20, 2022
Grant date	Dec 3, 2024
Priority date	—
Expiry date	Jan 5, 2043

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B35/002
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.