Film deposition systems and methods
US12163227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2022 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Nov 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.