Method of performing programming operation and related memory device

US12165716B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Xinlei Jia · Hubei, CN
• Shan Li · 红钢城街道, CN
• Yali Song · 红钢城街道, CN
• Lei Jin · 红钢城街道, CN
• Hongtao Liu · San Diego, US
• Jianquan Jia · 红钢城街道, CN
• Xiangnan Zhao · 红钢城街道, CN
• Yuan-Yuan Min · 红钢城街道, CN

Key dates

• Filing date: Jul 20, 2022
• Grant date: Dec 10, 2024
• Expiry date: Mar 1, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/32
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory device includes a memory array including memory strings, each memory string comprising a plurality of first memory cells, a plurality of second memory cells, and one or more dummy memory cells between the first memory cells and the second memory cells. The first memory cells are between drain terminals of the memory strings and the dummy memory cells, and the second memory cells are between source terminals of the memory strings and the dummy memory cells. The bit lines are respectively coupled to drain terminals of the memory strings. The word lines are respectively coupled to gate terminals of the first memory cells and the second memory cells. A word line driver is configured to apply a first voltage signal to each of the word lines that are coupled to the gate terminals of the first memory cells during a pre-charge phase.