Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor
US12165848B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jun 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.