Method for reducing charging of semiconductor wafers
US12165867B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Jul 24, 2023 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jul 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0277
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.