Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same

US12166068B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Ralph N. Wall · Pocatello, US
• Raymond Lappan · Pocatello, US

Key dates

• Filing date: Jan 28, 2022
• Grant date: Dec 10, 2024
• Expiry date: Mar 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

In an aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and forming a first semiconductor layer within the trench and along the sidewall. In an embodiment, the process can further include forming a barrier layer within the trench after forming the first semiconductor layer; forming a second semiconductor layer within the trench after forming the barrier layer, wherein within the trench, first and second portions of the second semiconductor layer contact each other adjacent to a vertical centerline of the trench; and exposing the second semiconductor layer to radiation sufficient to allow a void within second semiconductor layer to migrate toward the barrier layer. In another embodiment, after forming a semiconductor within the trench, the process can further include forming an insulating layer that substantially fills a remaining portion of the trench.