Cerium-doped ferroelectric materials and related devices and methods
US12166098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Jan 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ferroelectric materials and more particularly cerium-doped ferroelectric materials and related devices and methods are disclosed. Aspects of the present disclosure relate to ferroelectric layers of hafnium-zirconium-oxide (HZO) doped with cerium that enable reliable ferroelectric fabrication processes and related structures with significantly improved cycling endurance performance. Such doping in ferroelectric layers also provides the capability to modulate polarization to achieve a desired operation voltage range. Doping concentrations of cerium in HZO films are disclosed with ranges that provide a stabilized polar orthorhombic phase in resulting films, thereby promoting ferroelectric capabilities. Exemplary fabrication techniques for doping cerium in HZO films as well as exemplary device structures including metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.