Light-emitting diode with electrodes on a single face and process of producing the same
US12166149B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Nov 20, 2019 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | Feb 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.