Electronic chip with two phase change memories
US12167703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2023 |
| Grant date | Dec 10, 2024 |
| Priority date | — |
| Expiry date | May 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
An electronic chip includes at least a first array of first elementary cells and a second array of second elementary cells. The first and second elementary cells form two types of phase change memory having a storage element formed by a volume of phase change material having either a crystalline state or an amorphous state depending on the bit stored. Each first elementary cell includes a volume of a first phase change material, and each second elementary cell includes a volume of a second phase change material that is different from the first material. Each elementary cell includes a heating connector configured for the passage of a heating current adapted to cause a phase change of the volume of phase change material of the elementary cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.