Three-dimensional memory device with improved charge lateral migration and method for forming the same

US12171098B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Xiaoxin Liu · 红钢城街道, CN
• Lei Xue · 红钢城街道, CN
• Zhiliang Xia · 红钢城街道, CN

Key dates

• Filing date: Sep 29, 2021
• Grant date: Dec 17, 2024
• Expiry date: Jan 20, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A three-dimensional (3D) memory device includes a stack structure and a channel structure. The stack structure includes interleaved conductive layers and dielectric layers. The channel structure extends through the stack structure along a first direction. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. The blocking layer and the storage layer are separated by the dielectric layers into a plurality of sections.