Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
US12176203B2 · kind B2 · utility
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28References
4Claims
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Key dates
| Filing date | Jan 11, 2022 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Dec 31, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a metal includes providing a structure a process chamber, and providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure. The metal may comprise a word line or another conductor of a three-dimensional memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.