Dual oxide analog switch for neuromorphic switching
US12178146B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Mar 28, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Exemplary semiconductor structures for neuromorphic applications may include a first layer overlying a substrate material. The first layer may be or include a first oxide material. The structures may include a second layer disposed adjacent the first layer. The second layer may be or include a second oxide material. The structures may also include an electrode material deposited overlying the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.