Methods of forming silicon carbide coated base substrates at multiple temperatures
US12180611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2023 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.