Semiconductor devices and methods for fabricating the same
US12183623B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Dec 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for fabricating the same are disclosed. A substrate including a first device region and a second device region is provided. A first isolation structure is formed in the substrate of the first device region and a second isolation structure is formed in the substrate of the second device region. Ion implantation on the first isolation structure is performed. The first isolation structure and the second isolation structure are etched back to form a first recess in the first isolation structure and a second recess in the second isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.