Lan Yao
20Patents
3h-index
29Co-inventors
55Inventor score
Filing activity: Jul 26, 2018 → Nov 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10515975B1 | Method for forming dual-deck channel hole structure of three-dimensional memory device | Electricity | 6 | Active |
| US10867678B2 | Three-dimensional memory devices | Electricity | 5 | Active |
| US10680003B2 | Staircase structure for memory device | Electricity | 4 | Active |
| US10672711B2 | Word line contact structure for three-dimensional memory devices and fabrication methods thereof | Electricity | 3 | Active |
| US11145666B2 | Staircase structure for memory device | Electricity | 1 | Active |
| US10854628B2 | Three-dimensional memory device and manufacturing method thereof | Electricity | 0 | Active |
| US10658379B2 | Array common source structures of three-dimensional memory devices and fabricating methods thereof | Electricity | 0 | Active |
| US12137558B2 | Staircase structure for memory device | Electricity | 0 | Active |
| US12183623B2 | Semiconductor devices and methods for fabricating the same | Electricity | 0 | Active |
| US12362223B2 | Semiconductor structure, fabrication method and three-dimensional memory | Electricity | 0 | Active |
| US12285437B2 | Reversing the undesirable pH-profile of doxorubicin via activation of a disubstituted maleamic acid prodrug at tumor acidity | Human Necessities | 0 | Active |
| US12324198B2 | Semiconductor device and manufacture method thereof | Electricity | 0 | Active |
| US12010838B2 | Staircase structure for memory device | Electricity | 0 | Active |
| US12376307B2 | Semiconductor structure, fabrication method and three-dimensional memory | Electricity | 0 | Active |
| US11958919B2 | “Living” radical polymerization method for vinyl monomer by near-infrared photothermal conversion | Chemistry; Metallurgy | 0 | Active |
| US11515329B2 | Three-dimensional memory device and manufacturing method thereof | Electricity | 0 | Active |
| US11101276B2 | Word line contact structure for three-dimensional memory devices and fabrication methods thereof | Electricity | 0 | Active |
| US11538824B2 | Three-dimensional memory devices with improved charge confinement and fabrication methods thereof | Electricity | 0 | Active |
| US11069712B2 | Three-dimensional memory device | Electricity | 0 | Active |
| US12185536B2 | Three-dimensional memory devices with reduced cell interference and fabrication methods thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.