Method for evaluating semiconductor substrate
US12183641B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2020 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Aug 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for evaluating electrical characteristics of a semiconductor substrate, the method including the steps of: forming a p-n junction on a surface of the semiconductor substrate; mounting the semiconductor substrate on a wafer chuck provided with an equipment for performing light irradiation on the surface of the semiconductor substrate and an equipment for measuring the quantity of the light for the irradiation; performing light irradiation on the surface of the semiconductor substrate for a predetermined time; and measuring an amount of carriers generated after the light irradiation of the p-n junction at least after turning off the light irradiation. This provides a method for evaluating a semiconductor substrate that allows the same evaluation in a wafer state as when an actual solid-state image sensor has been formed without producing a device by using process equipment when evaluating characteristics corresponding to residual image characteristics of a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.