Thin-film transistors and MIM capacitors in exclusion zones
US12183668B2 · kind B2 · utility
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Key dates
| Filing date | Mar 25, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | May 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin-film transistors and MIM capacitors in exclusion zones are described. In an example, an integrated circuit structure includes a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors. A back-end-of-line (BEOL) structure is above the semiconductor substrate. A thin-film transistor (TFT) and/or a metal-insulator-metal (MIM) capacitor is in the BEOL structure. The TFT and/or MIM capacitor is vertically over the zone that excludes MOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.