Ribbon or wire transistor stack with selective dipole threshold voltage shifter

US12183739B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Nicole K. Thomas · Portland, US
• Eric Mattson · Portland, US
• Sudarat Lee · Hillsboro, US
• Scott B. Clendenning · Portland, US
• Tobias Brown-Heft · Portland, US
• I-Cheng Tung · Hillsboro, US
• Thoe Michaelos · Portland, US
• Gilbert Dewey · Beaverton, US
• Charles C. Kuo · Hillsboro, US
• Matthew V. Metz · Portland, US
• Marko Radosavljevic · Portland, US
• Charles Cameron Mokhtarzadeh · Portland, US

Key dates

• Filing date: Dec 18, 2020
• Grant date: Dec 31, 2024
• Expiry date: Mar 31, 2043

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y10/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.