Image sensor and method of making
US12183753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | May 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.