Non-linear HEMT devices

US12183815B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Abhishek Banerjee · Houston, US
• Peter Moens · Zottegem, BE
• Herbert De Vleeschouwer · Dentergem, BE
• Peter Coppens · Duffel, BE

Key dates

• Filing date: Jan 7, 2021
• Grant date: Dec 31, 2024
• Expiry date: Oct 31, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112

Abstract

High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.