Structure of memory device having floating gate with protruding structure

US12185532B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Liang Yi · Singapore, SG
• Zhiguo Li · Hangzhou City, CN
• Chi Ren · Wenzhou, CN
• Qiuji Zhao · Singapore, SG
• Boon Keat Eddy Toh · Singapore, SG

Key dates

• Filing date: Aug 4, 2023
• Grant date: Dec 31, 2024
• Expiry date: Aug 4, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

A structure of memory device includes an active region in a substrate, a dielectric layer on the active region, and a floating gate disposed on the dielectric layer. The active region extends along a first direction in a top-view. The floating gate includes a first protruding structure extending along the first direction from a sidewall of the floating gate protruding from a top surface of the substrate. The whole of the first protruding structure is located in the active region.