Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement
US12185540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Mar 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, forming a sacrificial memory opening fill structure in the memory opening, replacing the sacrificial material layers with electrically conductive layers, removing the sacrificial memory opening fill structure selective to the electrically conductive layers, and forming a memory opening fill structure the memory opening after replacing the sacrificial material layers with electrically conductive layers and after removing the sacrificial memory opening fill structure. The memory opening fill structure includes a memory film and a vertical semiconductor channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.