Semiconductor device and method of forming the same
US12185553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.