System and method for defect inspection using voltage contrast in a charged particle system
US12191112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2020 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Jan 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31774
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.