Method of fabricating an air gap
US12191195B2 · kind B2 · utility
1Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Mar 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an air gap includes receiving a first thickness information of an inter-metal dielectric layer formed on a substrate and receiving a second thickness information of an inter-layer dielectric layer formed on the substrate. Then, a first etching is performed, wherein the first etching includes etch the inter-metal dielectric layer based on a first etching control value corresponding to the first thickness information. After the first etching, a second etching is performed to etch the inter-layer dielectric layer based on a second etching control value corresponding to the second thickness information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.