Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods

US12193208B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Devesh Dadhich Shreeram · Boise, US
• Kangle Li · Boise, US
• Matthew N. Rocklein · Boise, US
• Wei Ching Huang · Dakeng, TW
• Ping Hsu · New Taipei, TW
• Sevim Korkmaz · Boise, US
• Sanjeev Sapra · Boise, US
• An-Jen B. Cheng · Boise, US

Key dates

• Filing date: Jan 13, 2022
• Grant date: Jan 7, 2025
• Expiry date: Aug 27, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/31

Abstract

A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.