Thin layer deposition with plasma pulsing
US12195851B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jun 10, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.