Method for inspecting pattern defects
US12196687B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2020 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Mar 4, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/8851
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.