Atmospheric plasma in wafer processing system optimization
US12198935B2 · kind B2 · utility
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12References
16Claims
0Family size
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Key dates
| Filing date | Mar 22, 2018 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Apr 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.