Technique for semiconductor manufacturing
US12198939B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Jun 24, 2022 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Sep 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material is received. A plurality of first main etches are performed to the semiconductor structure for a plurality of first durations under the first etching chemistry. A plurality of pumping operations are performed for a plurality of pumping durations, each of the pumping operations being prior to each of the first main etches. Each of the first durations is in a range of from about 1 second to about 2.5 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.