Method for modifying the strain state of a block of a semiconducting material
US12198940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2020 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Sep 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for modifying a strain state of a block of a semiconducting material including steps in the following order: a) making a lower region of the block of the semiconducting material resting on a substrate amorphous, while a crystalline structure of an upper region of the block in contact with the lower region is maintained, then b) forming a stressing zone on the block of the semiconducting material, then c) making at least one creep annealing with a suitable duration and temperature to enable creep of the lower region without recrystallizing a material of the lower region, and then d) making at least one recrystallization annealing of the lower region of the block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.