Semiconductor on insulator structure for a front side type imager
US12198975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Mar 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.