Contact over active gate structures with tapered gate or trench contact for advanced integrated circuit structure fabrication
US12199161B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2020 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jan 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contact over active gate (COAG) structures with a tapered gate or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, wherein individual ones of the plurality gate of structures have thereon a conductive cap between sidewall spacers. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, wherein individual ones of the plurality of conductive trench contact structures have thereon a conductive cap between sidewall spacers. A conductive structure is in direct contact with the conductive cap and sidewall spacers on one of the plurality of gate structures or with the conductive cap and sidewall spacers on one of the plurality of conductive trench contact structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.