Methods for shaping magnetic fields during semiconductor processing
US12203163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2021 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Mar 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.