Overwrite read methods for resistance switching memory devices
US12205640B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Jul 14, 2021 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0057
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided that includes reading a plurality of resistance-switching memory cells comprising a block of data, decoding the block of data using an error correction code decoder, and based on results of the decoding, selectively performing an overwrite-read process to read the block of data. The overwrite read process determines a change in resistance of the resistance-switching memory cells in response to a write pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.