Method for depositing film and film deposition system
US12205817B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jan 5, 2022 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jul 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/338
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.